ELECTRONICS AND COMMUNICATION ENGINEERING


VLSI


Unit -I     CMOS FABRICATION AND DESIGN            



Review of MOS Transistors: nMOS, pMOS CMOS Fabrication and Layout: Inverter and Cross Section - Fabrication process - Layout Design Rules - Gate Layout - Stick Diagrams. VLSI Design Flow: Design specifications, Design Entry, Functional Simulation, PPR, Timing Simulation, Fusing/Fabrication into the Chip. Logic gates: CMOS Inverter- CMOS NAND Gate- CMOS Combinational Logic- CMOS OR Gate- Pass Transistor and Transition Gates- Multiplexers -Latches and Flip-Flops. 

Unit -II    CMOS LOGIC, CIRCUIT AND PHYSICAL DESIGN



CMOS Logic Design: Top Level Interface, Block Diagrams, Hierarchy, Hardware Description Language - Circuit Design. Physical Design: Floor Planning, Standard Cells, Pitch Matching, Slice Plans, Arrays, Area Estimation. 

Unit -III  CMOS THEORY AND PROCESSINGTECHNOLOGY



Theory: Ideal I-V Characteristics - C-V Characteristics -Non ideal I-V Effects - DC Transfer Characteristics of CMOS Transistor CMOS Processing Technology: Background, Wafer Formation, Photolithography, Well and Channel Formation, SiO2, Isolation, Gate Oxide, Gate and Source/Drain Formation, Contacts and Metallization, Passivation, Metrology. 

Unit -IV  SEQUENTIAL CIRCUITS  



Sequencing Static Circuits- Circuit Design for Latches and Flip-Flops - Static Sequencing Element Methodology- Sequencing Dynamic Circuits- Synchronizer. 

Unit -V ARITHMETIC BUILDING BLOCKS AND MEMORY ARCHITECTURES



Design of arithmetic building blocks: Adders, Multipliers, Shifters – Comparator– Counters - Memories: SRAM, DRAM